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Thermal oxidation of hafnium silicide films on silicon

6 Hf o 2 4 6 8 ~ SPUTTER TIME (MINJ FIG. 3. Auger depth profile of the hafnium silicide film oxidized at 500C for 20 min in oxygen. The development of a knee in the ...

US7674446B2 - Hafnium silicide target for forming

A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior in workability ...

US7517515B2 - Hafnium silicide target for forming

The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 1.02-2.00 . Obtained is a hafnium silicide target superior ...

Hafnium silicide formation on Si(001) - arXiv

Hafnium silicide formation on Si(001) H. T. Johnson-Steigelman, ... The present paper reports our investigation of the formation of hafnium silicide films, ...

Thermal oxidation of hafnium silicide films on

Hafnium silicide films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through boiling water in the temperature range 400–1000 °C. The ...

Hafnium silicate formation by ultra-violet/ozone

Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide. ... The hafnium silicide film before UV/O 3 exposure shows the presence of an ...

(PDF) Hafnium silicide formation on Si(100) upon

The Hf thickness was calculated from the silicon photoelectron signal including the inelastic damping caused by the initially amorphous hafnium films [5].

Hafnium Silicide AMERICAN ELEMENTS

Hafnium Silicide HfSi2 bulk research qty manufacturer. Properties, SDS, Applications, Price. Free samples program. Term contracts credit cards/PayPal accepted.

Preparation of hafnium oxide thin film by electron

Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a ... indicates the existence of hafnium silicide inside these films.

Hafnium Silicide Sputtering Targets - Micron Metals

Description. Hafnium Silicide Sputtering Targets *Prices are subject to change without notice due to market conditions.

Hafnium Silicide Sputtering Targets - Micron Metals

Description. Hafnium Silicide Sputtering Targets *Prices are subject to change without notice due to market conditions.

Atomic Layer Deposition of Hafnium and Zirconium Oxides ...

Atomic layer deposition ... of smooth and highly conformal films of hafnium and zirconium oxides was ... oxide on silicon might produce zirconium silicide ...

Hafnium Silicide Sputtering Target AMERICAN

Hafnium Silicide Sputtering Target HfSi2 bulk research qty manufacturer. Properties, SDS, Applications, Price. Free samples program. Term contracts credit cards ...

Structure and composition of hafnium diboride

The structure and composition of hafnium diboride films grown by rf magnetron sputtering have been studied by X-ray diffraction and secondary ion mass spectrometry.

Hafnium Silicide - stonecosmetics.eu

Thermal oxidation of hafnium silicide films on silicon ... Hafnium silicide films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through ...

Kurt J. Lesker Company Hafnium Oxide HfO2

Hafnium Oxide HfO2 Pellets Tablets Evaporation Materials ... and applying the density of the material and desired film thickness to that number ...

Hafnium Silicide Target for Forming Gate Oxide

06/08/2009  A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior ...

Nitrogen Incorporation into Hafnium Oxide Films by Plasma ...

Nitrogen Incorporation into Hafnium Oxide Films by Plasma Immersion Ion Implantation Banani SEN, Hei WONG,B.L.YANG,A.P.HUANG1,P.K.CHU1, V. FILIP, and C. K. SARKAR2

Sputtering Targets - MSE Supplies

MSE PRO™ Custom-Made Sputtering Targets MSE PRO™ high quality sputtering targets have been ... Sputtering Targets (Customized) Thin Film ... Hafnium Silicide ...

Resistive switching characteristics of nickel silicide ...

Resistive switching characteristics of nickel silicide layer embedded HfO 2 film Debashis Panda, Chun-Yang Huang, and Tseung-Yuen Tsenga) Department of Electronics ...

Sputtering Targets - MSE Supplies

MSE PRO™ Custom-Made Sputtering Targets MSE PRO™ high quality sputtering targets have been ... Sputtering Targets (Customized) Thin Film ... Hafnium Silicide ...

Hafnium Silicide Target for Forming Gate Oxide

06/08/2009  A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior ...

Silicide Ceramic Sputtering Targets - MSE Supplies

MSE PRO™ Custom-Made Sputtering Targets MSE PRO™ high quality sputtering targets have been ... › Silicide Ceramic Sputtering Targets. ... films , laser ablation ...

Silicide Sputtering Targets Sputtering Targets ...

Rate this post Silicide Sputtering Targets Silicide Spu []

Binary compounds of silicon - Wikipedia

Binary compounds of silicon are ... For lithium silicide many ... MnSi 1.73 was investigated as thermoelectric material and as an optoelectronic thin film. ...

Group 1  Group 2  Transition metals  Group 13  Group 14  Group 15

HAFNIUM SILICIDE TARGET FOR GATE OXIDE FILM

09/07/2008  HAFNIUM SILICIDE TARGET FOR GATE OXIDE FILM FORMATION AND ITS PRODUCTION METHOD ... A hafnium silicide target for forming a gate oxide film composed ...

HfC-Hafnium carbide_HUAWEI MATERIAL - hnjc

HfSi2-Hafnium silicide; ... coating, flinty thin film and metallurgy automation key materials.Very suitable for rocket nozzle, ... HfC-Hafnium carbide

Ultrathin Hafnium Oxide with Low Leakage and Excellent ...

Ultrathin Hafnium Oxide with Low Leakage and Excellent Reliability for Alternative Gate Dielectric Application Byoung Hun Lee, Laegu Kang, Wen-Jie Qi, Renee Nieh ...

Kurt J. Lesker Company Titanium Dioxide TiO2

Titanium Dioxide TiO2 Black Pieces Tablets Evaporation Materials

PVD - SPUTTERING DEPOSITION - PHYSICAL

pvd - sputtering deposition - physical vapor deposition - sputtering thin films metals alloys dielectrics dc rf magnetron sputter deposition and reactive sputtering ...

Growth and characterization of hafnium silicate

Physical and electrical properties of hafnium silicate (HfSixOy) dielectric films prepared by room-temperature UV/ozone (O3) oxidation of hafnium silicide (HfSi2) are reported. Angle-resolved x-ray photoelectron spectroscopy was used to determine chemical bonding at the film interface and within the bulk film. These films, with 12 at. % Hf ...

Hafnium oxide-3N_HUAWEI MATERIAL - hnjc

Hafnium oxide is a kind of non-toxic and tasteless white solid, not dissolve in water, hydrochloric acid and nitric acid, be soluble in concentrated sulfuric acid and hydrogen fluoride acid; They are chemically inert, with thin film properties, with high melting point, so it has a wide range of end-uses.

Thermal oxidation of hafnium silicide films on silicon

Abstract Hafnium silicide films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through boiling water in the temperature range 400-1000 °C.

Hafnium silicide formation on Si(100) upon

However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf ...

Study of sputtered Hafnium oxide Films for Sensor Applications

Study of sputtered Hafnium oxide Films for Sensor Applications H. Grüger, C. Kunath, E. Kurth, S. Sorge, W. Pufe Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany

Hafnium silicate and nitrided hafnium silicate as gate ...

xGe1-x(100) Si (100) SixGe1-x(100) Methanol+0.5% HF cleaned Si1-xGex(100) Sputter deposition from hafnium silicide target, room temperature Si 1-xGex (100)

Work Functions of the transition Metals and Metal

OSTI.GOV Journal Article: Work Functions of the transition Metals and Metal Silicides Title: Work Functions of the transition Metals and Metal Silicides Full Record

Gate Stack and Silicide Issues in Silicon Processing II

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUM E 670 Gate Stack and Silicide Issues in Silicon Processing II Symposium held April 17

Vacuum Deposition Techniques and Tables - Ted

Vacuum Deposition Techniques and Tables for thin film applications The vacuum deposition techniques table lists the best suited methods, such as thermal evaporation, E-Beam evaporation or sputtering for a large number of materials.

Ceramic Sputtering Target(id:1452619) Product

China rare metal material co.,ltd supply many kind of ceramic sputtering target ( Boride target,Carbide target, Fluoride target,Oxide target,Selenide target,Silicide target, Sulfidestarget,Tellurides target)